UV Blocking Ga2O3/Cu2O Heterojunction Photoelectric Device

Youngwoong Ju; Seunghan Bae; Woohyeok Kim; Jinsol Jeong; Uyoung Jung; Junsik Lee; Chanhyuk Choi; Naveen Kumar; Juhyung Yun; Joondong Kim

doi:10.7836/kses.2023.43.4.019

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2023 Vol.43, Issue 4 Preview Page Next Page

Research Article

UV Blocking Ga₂O₃/Cu₂O Heterojunction Photoelectric Device UV를 차단하는 Ga₂O₃/Cu₂O 이종접합 광전소자

30 August 2023. pp. 19-27

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Abstract

A transparent photoelectric device was fabricated using a metal-oxide heterojunction. Owing to the large energy bandgap of the p-type (Cu₂O)–n-type (Ga₂O₃) junction, a space charge region was spontaneously formed, which provided an electric field to collect the photogenerated carriers, resulting in photovoltaics with solar-cell features. The formation of the Cu₂O layer was modulated by the O₂ flow rate to tune the photovoltage to 910 mV and the photocurrent to 3.2 mA/cm². In addition, a transparent photovoltaic device was used along with the photodetectors to achieve high responsivity (149 mA/W) and detectivity (1.39 × 10¹² Jones) at a wavelength of 340 nm. This suggests that high-performance and transparent Cu₂O/Ga₂O₃ devices can be adopted for self-powering invisible human electronics.

Keywords

Photoelectric device

Solar cell

Photodetector

Cu₂O/Ga₂O₃

키워드

광전소자

태양전지

광검출기

Cu₂O/Ga₂O₃

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Information

Publisher :Korean Solar Energy Society
Publisher(Ko) :한국태양에너지학회
Journal Title :Journal of the Korean Solar Energy Society
Journal Title(Ko) :한국태양에너지학회 논문집
Volume : 43
No :4
Pages :19-27
Received Date : 2023-05-03
Revised Date : 2023-06-02
Accepted Date : 2023-06-20
DOI :https://doi.org/10.7836/kses.2023.43.4.019

Journal of the Korean Solar Energy Society 한국태양에너지학회 논문집 ISSN:1598-6411(Print) 2508-3562(Online)

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